Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
-
Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 213
1993
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Sensitivity of optical measurements of planar stratified structures and reduction of experimentsl data
Year: 1993, edition: Vyd. 1, number of pages: 99 s.
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Temperature dependence of the dielectric function and the interband critical-point parameters of GaP
Thin Solid Films, year: 1993, volume: 1993, edition: -
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Temperature dependence of the dielectric function and the interband critical-point parameters of GaP
Phys. Rev. B, year: 1993, volume: 48, edition: 11
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Temperature dependence of the refractive index of crystalline germanium-silicon alloys
Appl. Phys. A, year: 1993, volume: 1993, edition: 2
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The diffuse x-ray scattering in real periodical superlatices
Superlattices and Microstructures, year: 1993, volume: 12, edition: 1
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Triple crystal x-ray diffractometry of periodic arrays of semiconductor quantum wires
Appl. Phys. Lett., year: 1993, volume: 63, edition: 23
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X-ray diffraction and reflectance, raman scattering and photoluminiscence characterization of thermally annealed epitaxial Si 1-x Ge x layers
Thin Solid Films, year: 1993, volume: 1993, edition: 2
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X-ray diffractometry of small defects in layered systems
J. Phys. D: Appl. Phys., year: 1993, volume: 26, edition: -
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X-ray double and triple crystal diffractometry of mosaic structure in heteroepitaxial layers
J. Appl. Phys., year: 1993, volume: 74, edition: 3
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X-ray double and triple crystal diffractometry of silicon crystals with small defects
Phys. Stat. Sol. (b), year: 1993, volume: 1992, edition: -